ult rafast switching rectifier voltage - 50 to 1000 volts current - 2.0 amperes features ? plastic package has underwriters laboratory flammability classification 94v-o utilizing flame retardant epoxy molding compound ? void-free plastic in do-15 package ? 2.0 ampere operation at ta=55 with no thermal runaway ? exceeds environmental standards of mil-s-19500/228 ? ultra fast switching for high efficiency high temperature soldering : 260 ? o c / 10 seconds at terminals ? pb free product at available : 99% sn above meet rohs environment substance directive request mechanical data ? case: glass passivation, do-15 ? terminals: axial leads, solderable per mil-std-202, method 208 ? polarity: band denotes cathode ? mounting position: any ? weight: 0.015 ounce, 0.4 gram maximum ratings and electrical characteristics ratings at 25 o c j ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. uf200 uf201 uf202 uf204 uf206 uf208 UF2010 units peak rev erse volt age, pepet itive ; v rm 50 100 200 400 600 800 1000 v maximum rms voltage 35 70 140 280 420 560 700 v dc bl ocking voltage; vr 50 100 200 400 600 800 1000 v average forward current, io @t a =55 3. 8? lead l ength, 60hz, resistive or inductive load 2.0 a peak forward surge current ifm (surge) 8.3msec . single half sine- wave super i mposed rated load (jedec method) 60 a maximum forward voltage v f @2.0a, 25 1.00 1.3 1.5 1.7 v maxi mum reverse current, @ rated t a =25 reverse voltage t a =100 5 100 a a typi cal junction c apacitance (note 1) cj 35 pf typi cal junction resi stance (note 2) r ja 45 reverse recovery time i f =.5a, i r =1a, i rr =.25a 50 75 ns operati ng and storage temperature range -55 to +150 notes: 1. measured at 1 mhz and applied reverse voltage of 4.0 vdc 2. thermal resistance from junction to ambient and from junction to lead length 0.375?(9.5mm) p.c.b. mounted do-15 unit:inch(mm) .034 (.86) .028 (.71) .140 (3.6) .104 (2.6) .300 (7.6) .230 (5.8) dia. dia. 1.0 (25.4) min. 1.0 (25.4) min. data sheet uf200~UF2010 semiconductor http://www.yeashin.com 1 rev.02 20110725 c c c c c c on c/w
rating and characteristic curves note:1.rise time = 7ns max. input impedance = 1 megohm. 22pf 2.rise time = 10ns max. source impedance = 50 ohms t rr +0.5a 0 -0.25 -1.0 set time 1cm base for 50 ns/cm fi g . 1-reverse recovery time characteristic and test circuit diagram 10 1 0.1 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 UF2010 tj = 25 uf200 typical forward voltage-vfm(vpk) 2.4 2.0 1.4 1.2 0.8 0.4 0 25 50 75 100 125 150 175 single phase half wave 60hz resisstive or inductive load .375" 9.5mm lead lengths ambient temperature, fig. 2-forward characteristics fig. 3-forward current derating curve 100 10 5 1 10 100 tj = 25 f = 1.0mhz vsig = 50mvp-p reverse voltage, volts 60 48 36 24 12 1 2 4 6 8 10 20 60 80 100 40 number of cycles at 60hz fig. 4-typical junction capacitance fig. 5-peak forward surge current ifm, apk average forward rectified current, amperes junction capacitance, pf pead forward surge current, amperes uf200~UF2010 http://www.yeashin.com 2 rev.02 20110725 c c c
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